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AUIRFP4310Z FRONT
AUIRFP4310Z FRONT

IPW65R065C7

N-Channel 650 V 33A (Tc) 171W (Tc) Through Hole PG-TO247-3

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Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id
4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3020 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
171W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3

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Shenzhen Xeefee Technology Co., Ltd.

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Room 408, Bantian Group Business Center, Shenzhen, Guangdong, China

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