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SOT 23 3 PKG
SOT 23 3 PKG

SI2393DS-T1-GE3

P-Channel 30 V 6.1A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 10 V
Vgs (Max)
+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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Shenzhen Xeefee Technology Co., Ltd.

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Room 408, Bantian Group Business Center, Shenzhen, Guangdong, China

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